Rapid thermal anneal and furnace anneal of beryllium‐implanted Ga0.47In0.53As

The activation efficiency of conventional furnace annealing (550–750 °C, 30 min, capless, AsH3/H2 ambient) and rapid thermal annealing (800 °C,∼1 s, SiO2 cap, N2 ambient) has been compared in Be‐doped Ga0.47In0.53As by investigating the carrier profiles and the atomic profiles. Nearly complete activation (100%) occurs during both 750 °C furnace annealing and rapid thermal annealing for an implanted fluence of 6×1013 Be ions/cm2. At a fluence of 6×1014 Be ions/cm2 a significantly higher activation (>50%) is found after rapid thermal annealing as compared with furnace annealing (30%) mainly due to out‐diffusion of Be during furnace annealing. Low‐temperature photoluminescence (2 K) revealed that comparable recrystallization is achieved in both methods. A high diffusivity of Be is apparent in the atomic depth profiles after furnace annealing. However, only insignificant redistribution is noticeable after rapid thermal annealing, probably due to gettering of the diffusing Be by defects.