Process property correlations in sol-gel derived lithium niobate thin films

Abstract Sol-gel processing was employed to deposit lithium niobate thin films on (100) silicon and platinum coated silicon. The films were annealed in oxygen at temperatures from 400 to 600°C. Characterization by X-ray diffraction and transmission electron microscopy showed crystallization to LiNbO3 at 400°C. The films had a preferred (104) orientation with increasing (012) orientation as the annealing temperature increased. Electrical characterization of the films showed evidence for ferroelectricity via the hysteresis loop and C-V curves. These measurements along with small signal dielectric measurement and I-V characteristics indicated the presence of a linear capacitor at the film-silicon substrate interface which affected the overall electrical properties of the films.