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RF Power Characteristics of the AlGaN/GaN HEMTs with Molecular Beam Deposition CeO 2 as Gate Insulator
RF Power Characteristics of the AlGaN/GaN HEMTs with Molecular Beam Deposition CeO 2 as Gate Insulator
2017
Yu-Sheng Chiu
Y. Lin
Y C Lin
J.C. Huang
H. Iwai
K. Kakushima
Edward Yi Chang
Keywords:
Optoelectronics
Deposition (law)
RF power amplifier
Molecular beam
Insulator (electricity)
Materials science
gate insulator
algan gan
molecular beam deposition
Correction
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