Degradation-robust single mode continuous wave operation of 1.46μm metamorphic quantum dot lasers on GaAs substrate

Narrow ridge lasers of 1.5μm range based on InAs∕InGaAs quantum dots grown on metamorphic (In,Ga,Al)As layers deposited on GaAs substrates using defect reduction technique are studied. It is shown that the lasers operate continuous wave (cw) in a single transverse mode. Single-mode 800mW output power in the pulsed regime is obtained for a 6μm ridge width. The dynamic studies of the lasers show a modulation bandwidth of ∼3GHz. Aging tests demonstrate >800h of cw operation at ∼50mW at 10°C (60°C) and >200h at 20°C (70°C) heat sink (junction) temperature without noticeable degradation.