Electric field induced metal–insulator transition in VO2 thin film based on FTO/VO2/FTO structure

Abstract A VO 2 thin film has been prepared using a DC magnetron sputtering method and annealing on an F-doped SnO 2 (FTO) conductive glass substrate. The FTO/VO 2 /FTO structure was fabricated using photolithography and a chemical etching process. The temperature dependence of the I – V hysteresis loop for the FTO/VO 2 /FTO structure has been analyzed. The threshold voltage decreases with increasing temperature, with a value of 9.2 V at 20 °C. The maximum transmission modulation value of the FTO/VO 2 /FTO structure is 31.4% under various temperatures and voltages. Optical modulation can be realized in the structure by applying an electric field.