Ion Channeling Measurements on Germanium Implanted and Annealed Silicon

We have prepared Ge x Si 1-x /Si structures by implanting germanium into silicon surfaces and thermally annealing. Implant energies were 100 and 150 keV and the total ion doses were between 1 and 10 × 10 15 ions/cm 2 . Ion channeling studies of these structures indicates that after annealing, the germanium atoms substitute into the silicon lattice and create a pseu-domorphic strained layer. In addition, channeling results suggest a residual band of dislocations at or beyond the ion range in the as-annealed samples.