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MOS Memory Using Silicon Nanocrystals Formed by Very-Low Energy Ion Implantation
MOS Memory Using Silicon Nanocrystals Formed by Very-Low Energy Ion Implantation
2000
E. Kapetanakis
P. Normand
D. Tsoukalas
G. Kamoulakos
Dimitrios N. Kouvatsos
J. Stoemenos
S. Zhang
J. A. van den Berg
David George Armour
Keywords:
Electronic engineering
Nanocrystal
Ion implantation
Analytical chemistry
Non-volatile memory
Materials science
Annealing (metallurgy)
Quantum tunnelling
Silicon
low energy
Fabrication
Correction
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