Effects of ohmic metal thickness on drain current capability of AlGaN/GaN HEMTs

This paper describes fabrication and characterization of AlGaN/GaN HEMTs for large current operation. By depositing a 1000nm-thick Au metal on Ti/Al/Mo/Au source and drain ohmic contacts, a drain current of more than 4 amperes has been achieved with a total gate width of 10 mm. We discuss the dependence of saturation drain current on gate width in terms of Au thickness and source/drain ohmic electrode width.