Growth of chromium doped semi-insulating InP by MOVPE

Growth of chromium doped InP by atmospheric pressure metal-organic vapour phase epitaxy is reported. Hexacarbonyl chromium and bis-benzene chromium are both shown to be efficient Cr precursors although significant co-incorporation of carbon is a limitation of the former. Structural and electrical properties of the layers are described. A compensating deep donor concentration of up to 3/spl times/10/sup 16/ cm/sup -3/ has been achieved. The resistivity of p-InP/Cr-InP/p-InP structures is as high as 3/spl times/10/sup 8/ /spl Omega/ cm. When this structure is incorporated in buried heterostructure lasers for current blocking, improved performance compared with conventional iron doped structures is observed. >