Selenium-assisted controlled growth of graphene–Bi2Se3 nanoplates hybrid Dirac materials by chemical vapor deposition

Abstract Se seed layers were used to synthesize the high-quality graphene–Bi 2 Se 3 nanoplates hybrid Dirac materials via chemical vapor deposition (CVD) method. The morphology, crystallization and structural properties of the hybrid Dirac materials were characterized by SEM, EDS, Raman, XRD, AFM and HRTEM. The measurement results verify that the Se seed layer on the graphene surface can effectively saturate the surface dangling bonds of the graphene, which not only impel the uniform Bi 2 Se 3 nanoplates growing along the horizontal direction but also can supply enough Se atoms to fill the Se vacancies. We also demonstrate the Se seed layer can effectively avoid the interaction of Bi 2 Se 3 and the graphene. Further experiments testify the different Se seed layer on the graphene surface can be used to control the density of the Bi 2 Se 3 nanoplates.