High Frequency Noise Characterization and Modeling of InGaP/GaAs SHBTs

InGaP/GaAs SHBTs have been fabricated and the device RF and noise performance has been measured. A small- signal model has been created from the S-parameters of the measured devices. Thermal and shot noise is added to create a first generation noise model, which shows good agreement with measured data. The devices (L=3x12 ∝m 2 ) showed an F MIN = 1.68 dB at 6 GHz for V CE = 1.8 V and I C = 1.56 mA.