The determination of absorption coefficients from the photo-response of silicon Schottky barriers☆

Abstract A novel approach to the measurement of the absorption coefficient was made through the use of differential photo-currents of Schottky barriers in order to eliminate the influence of unknown surface conditions. By varying the reverse bias on Schottky barriers created by semitransparent Au on Si wafers, the depth of the barrier layer was varied and the resulting photocurrents were used to evaluate the absorption coefficient of the substrate at room temperature. The results are in good agreement with values published in the recent literature.