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In-situ SiNをゲート絶縁膜に用いたAlGaN/GaN MIS-HFET(化合物半導体IC及び超高速・超高周波デバイス/一般)
In-situ SiNをゲート絶縁膜に用いたAlGaN/GaN MIS-HFET(化合物半導体IC及び超高速・超高周波デバイス/一般)
2009
masayuki kuroda
tomohiro murata
satosi nakazawa
tosiyuki takizawa
syou mei nisizima
gaku yanagihara
tetuzou ueda
tuyosi tanaka
Keywords:
Analytical chemistry
In situ
Materials science
Optoelectronics
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