Charge storage characteristics of atomic layer deposited ZrO2/Al2O3 multilayered films

The multilayered films-based charge trap flash memory cells were fabricated by incorporating high- k ZrO 2 /Al 2 O 3 nanolaminates as charge trapping layer and amorphous Al 2 O 3 as tunneling and blocking layers. The thickness of high- k ZrO 2 or Al 2 O 3 film in charge trapping layer after annealing treatment was about 1.5 nm for each layer. The charge storage characteristics of such memory cells were measured, and the results demonstrated that they had a large hysteresis memory window of 3.85 V at a sweeping gate voltage of ± 8 V, an excellent endurance up to 10 5 write/erase cycles and a small charge loss of 9.6% after 10 years.