A GaN HEMTs Nonlinear Large-Signal Statistical Model and Its Application in S-Band Power Amplifier Design

A GaN HEMTs nonlinear large-signal statistical model based on empirical equivalent circuit including nonlinear electrothermal effect and trapping effects is proposed in this letter. The electrothermal model is constructed by one stage nonlinear R-C electrothermal network, and the trapping effects is modeled by effective gate (V gseff ) bias based on Angelov model. Thirty-four GaN HEMTs from 10 batches are measured and all the parameters in the large-signal model are extracted by in-house parameters extraction program. The statistical method is modeled by combining principal component analysis, factor analysis, and multiple regressions modeling techniques. The statistical model is implemented in Agilent-ADS and the Monte Carlo simulation is fulfilled for validation. Two S-band GaN HEMT power amplifiers are designed by using the established statistical model for demonstration purpose. The results show that good accuracy have been achieved by comparing measured and Monte Carlo simulated output power (Pout) and power added efficiency (PAE). So this method is proved to be suitable for GaN HEMT power amplifier's design and yield estimation.