High field transport properties of InAs/AlGaSb quantum wires

Abstract We demonstrate the successful fabrication of multiple quantum wire structures using InAs/AlGaSb heterostructures and report on their transport properties. We have performed magnetotransport measurements on the various width of the wires ranging between 0.2 and 0.4 μm. One-dimensional transport properties confirmed by magnetic depopulation were observed up to 0.4-μm-wide wires, and the sublevel spacing was as large as 5.9 meV for 0.2-μm-wide wires. This demonstrates the advantageous feature of InAs/AlGaSb heterostructures for realizing quantum devices operating at higher temperatures. High field transport properties also reveal their advantageous features.