Interferometric investigation of the SiSiO2 interregion at wavelengths of 110–130 Å

Abstract The energy and angular dependence of the reflectivity in the soft X-ray region contains valuable information concerning the microstructure of thin films and interfaces. Because of its high quantum effectivity, the method is less destructive compared with other ones. Reflectivities from R≅1 down to R≅10 −5 have been measured. In the theoretical model, as well as the optical constants and the thicknesses, the roughness of all interfaces must be taken into account.