Comprehensive study of systematic and random variation in Gate-Induced Drain Leakage for LSTP applications
2011
Systematic and random variability of Gate-Induced Drain Leakage (GIDL) current have been studied for the first time. Trap-assisted tunneling current shows more instability than band-to-band tunneling current in every kinds of variations resulting from high sensitivity of the traps to impurities under MOSFET channel.
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