Growth and SAW Properties of (Ba2-xSrx)TiSi2O8 Crystals

Part of the phase diagram of a (Ba2-xSrx)TiSi2O8 system is demonstrated and then (Ba2-xSrx)TiSi2O8 (x≤1.0) single crystals are grown by the Czochralski (CZ) technique and the edge-defined film-fed growth (EFG) technique. The crystal composition, particularly the Sr concentration, of a CZ grown crystal varies according to the normal freezing distribution. The Sr concentration of an EFG grown crystal is almost constant. The excellent SAW properties; low temperature coefficients of delay and high electromechanical coupling factors of the grown crystals are also described.