Erratum: 10‐GHz 4.69‐W/mm InAlN/GaN HFET on sapphire substrate [Phys. Status Solidi C 9, 855–857 (2012)]

Unfortunately, the Fig. 2 in the right column on page 856 was misplaced and should be corrected. The correct figure is shown here (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)