Scanning tunneling microscopy and spectroscopy of Si/SiGe(001) superlattices

Cross‐sectional scanning tunneling microscopy and spectroscopy were used to study a modulation‐doped Si/Si0.76Ge0.24(001) superlattice. Contrast between the Si and Si0.76Ge0.24 layers has been observed in topographic images. Features such as band‐edge discontinuities and band bending arising from doping have been detected in spectroscopic measurements at a series of points across the superlattice structure.