Third harmonic generation in ZnO semiconductor using the simplified bond hyperpolarizability model

We describe the fourth rank tensor and the related third harmonic generation (THG) light intensity profile in a (0002) wurtzite structure using the simplified bond hyperpolarizability model (SBHM). We show that the resulting THG intensity is isotropic e.g., does not depend on the azimuthal rotation angle of the material. Assuming that THG inside wurtzite structures are dominated solely by bulk dipoles, only one fitting parameter in terms of the effective THG hyperpolarizability is required to generate the Rotational Anisotropy THG (RATHG) experiment result.