5.8 dBm P dB , high gain W-band low-noise amplifier using high breakdown voltage InP/InGaAs DHBT technology

A five-stage W-band low-noise amplifier (LNA) based on the authors' InP/InGaAs double heterojunction bipolar transistors (DHBTs) process is reported. The LNA achieves a peak gain of 33.1'dB and 7.8'dB noise figure at 81GHz. Its output-related 1'dB compression point (P 1dB ) lies at 5.8 dBm. The high gain and linearity of the LNA is mainly attributed to the performance of the DHBTs exhibiting a high breakdown voltage (BVceo 8.7V), a current gain cutoff frequency ( f T ) of 167GHz, and a maximum oscillation frequency ( f max ) of 265GHz.