Silicon photomultiplier light response properties

The presented results are obtained during the first steps taken in order to develop a setup and measurement procedures which allow to compare properties of diverse kinds of silicon photomultiplier. The response to low-intensity light was studied for silicon photomultipliers produced by MEPhI/PULSAR (Russia), CPTA (Russia), Hamamatsu (Japan), ITC-irst (Italy) and SensL (Ireland).