Size distribution and magnetic behavior of lead inclusions in silicon single crystals

The size distribution of Pb inclusions formed by high-dose ion implantation in crystalline Si has been studied with a variety of experimental techniques. Results obtained from small angle x-ray scattering, transmission electron microscopy, and low-temperature magnetic moment measurements are compared. For samples implanted at room temperature, the results depend on which technique has been used, due to the amorphization of the silicon. The experiments on the samples implanted at an elevated temperature yield compatible results.