Method for eliminating electroplating cavity defects on wafer surface

The invention discloses a method for eliminating electroplating cavity defects on a wafer surface. Through using a current direction controllable circuit in carrying out electroplating filling to the grooves or through holes of the wafer surface, a current magnitude and direction adjustable circuit is formed; forward and reverse currents are applied to a wafer alternately so as to form an electroplating/etching sequence; in the electroplating process, the wafer surface can be electroplated; the coating film on the wafer surface can be dissociated; therefore, relatively good step coverage rate and good groove (through hole) opening are obtained; the perfect filling process is realized; and the cavity defects formed in the filling process can be reduced.