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Development of Deposition Technology of Gate SiO 2 Layer for GaN Power Transistors
Development of Deposition Technology of Gate SiO 2 Layer for GaN Power Transistors
2016
Shota Takagi
Tetsuji Arai
Keisuke Arimoto
Junji Yamanaka
Kiyokazu Nakagawa
Toshiyuki Takamatsu
Katsunori Ueno
Keywords:
Gate oxide
Power semiconductor device
Electronic engineering
Materials science
Optoelectronics
gate insulator
Deposition (law)
Correction
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