On the growth of conductive aluminum doped zinc oxide on 001 strontium titanate single crystals

Abstract Aluminum doped zinc oxide (AZO) thin films were obtained by pulsed laser deposition on ( 001 ) SrTiO 3 (STO) on a range of substrate temperatures during ablation between 300 °C and 600 °C. A hexagonal system lying on a cubic one should be difficult to be obtained in epitaxial form. The geometrical selection of the AZO growth on ( 001 ) STO is not giving a unique preferential orientation. Two orientations, c -axis (along [ 001 ]) and 110 , have been observed experimentally with different ratios at different substrate temperature. Discussions are made with respect to the temperature dependence of lattice mismatch between the two cases and the cubic surface of the substrate, and to the substrate surface morphology and terminating atomic layer composition. The 110 AZO is the main phase at deposition temperature of 550 °C, while for other substrate temperatures the 001 is the preferential orientation. The conductive character of 110 AZO thin film have been inferred from both ellipsometry spectra and current–voltage measurements. Excepting the samples deposited at 300 °C, the lowest resistivity is recorded for the samples with 110 AZO as the main phase.