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Electron channeling contrast imaging of defects in III-nitride semiconductors
Electron channeling contrast imaging of defects in III-nitride semiconductors
2014
C. Trager-Cowan
G. Naresh-Kumar
N. Allehiani
Simon Kraeusel
Ben Hourahine
S. Vespucci
D. Thomson
Jochen Bruckbauer
Gunnar Kusch
P. R. Edwards
R. W. Martin
C. Mauder
A. P. Day
Aimo Winkelmann
Arantxa Vilalta-Clemente
Angus J. Wilkinson
P. J. Parbrook
M. J. Kappers
M. A. Moram
Rachel A. Oliver
C. J. Humphreys
Philip A. Shields
E. D. Le Boulbar
D. Maneuski
Val O'Shea
Ken Mingard
Keywords:
Analytical chemistry
Nitride
Crystallography
Materials science
Semiconductor
Electron
Molecular physics
contrast imaging
Nanotechnology
nitride semiconductors
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