Epitaxial growth method for improving GaN-based light-emitting diode (LED) quantum well structure to improve carrier recombination efficiency

The invention discloses an epitaxial growth method for improving a GaN-based light-emitting diode (LED) quantum well structure to improve carrier recombination efficiency. The method comprises the following steps of: annealing a substrate, and nitriding; growing a low temperature GaN buffer layer; growing a non-doped high temperature GaN buffer layer; growing a Si-doped N-type GaN layer with stable doping density; growing a low temperature shallow quantum well; growing a low temperature multi-quantum well luminous layer, wherein the multi-quantum well luminous layer is divided into three parts which grow under different growth conditions; growing a low temperature P-type GaN layer by taking nitrogen as carrier gas; heating to grow a P-type AlGaN electron barrier layer; growing a high temperature P-type GaN layer; growing a P-type contact layer; and reducing the temperature of a reaction chamber, annealing, and cooling to room temperature. When multi-quantum wells are grown, the position of a PN junction can be regulated in an optimized way, more carriers are captured and recombined, the luminous efficiency is improved, the inner quantum well effect is increased, and a high luminous intensity GaN-based LED is obtained.