Thermoelectric properties of MOCVD-grown AlInN alloys with various compositions
2011
Thermoelectric properties of AlInN alloys, grown by metalorganic vapor phase epitaxy (MOVPE), with In-contents (x)
from 11 % up to 21.34% were characterized and analyzed at room temperature. The thermoelectric figure of merit (Z*T)
values of the n-Al 1-x In x N alloys were measured as high as 0.391 up to 0.532 at T = 300 K. The use of high In-content (x
= 21.34%) AlInN alloys leads to significant reduction in thermal conductivity [κ = 1.62 W/(mK)] due to the increased
alloy scattering, however, the optimized thermoelectric material was obtained for AlInN alloy with In-content of 17%
attributed to its large power factor.
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