Enhanced memory characteristics of charge trapping memory by employing graphene oxide quantum dots

In this study, graphene oxide quantum dots (GOQDs) are embedded in the charge trapping layer of high-k material HfO2 for nonvolatile memory applications. The fabricated devices exhibit a large memory window of ∼1.57 V under a ±3.5 V applied sweeping voltage and show only ∼13.1% of charge loss after a retention time of 1.2 × 104 s. This excellent performance is attributed to the quantum well formed in the charge trapping layer. Defect traps in the HfO2 film enhance the charge trapping efficiency and retention property of fabricated devices. This work implies that GOQDs embedded in high-k materials are promising for charge trapping memory applications.In this study, graphene oxide quantum dots (GOQDs) are embedded in the charge trapping layer of high-k material HfO2 for nonvolatile memory applications. The fabricated devices exhibit a large memory window of ∼1.57 V under a ±3.5 V applied sweeping voltage and show only ∼13.1% of charge loss after a retention time of 1.2 × 104 s. This excellent performance is attributed to the quantum well formed in the charge trapping layer. Defect traps in the HfO2 film enhance the charge trapping efficiency and retention property of fabricated devices. This work implies that GOQDs embedded in high-k materials are promising for charge trapping memory applications.