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Top-gate monolayer MoS 2 MOSFETs with ZrO 2 gate dielectrics formed by low temperature ALD
Top-gate monolayer MoS 2 MOSFETs with ZrO 2 gate dielectrics formed by low temperature ALD
2021
Wen Hsin Chang
Naoya Okada
Masayo Horikawa
Takahiko Endo
Yasumitsu Miyata
Toshifumi Irisawa
Keywords:
Optoelectronics
Dielectric
Monolayer
Materials science
MOSFET
Correction
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