Deposition of monoatomic and compound metal layers by the dynamic ion mixing

Abstract A unique approach and a single-ion-beam experimental setup for in situ ion implantation combined with the deposition of various materials, ion-beam mixing and sample surface cleaning are suggested. Rutherford backscattering (RBS) and Auger electron spectroscopy (AES) have been used to measure the radial and depth distributions of deposited/implanted atoms as well as the spatial distribution of sputtered atoms. Two-component and three-component materials have been deposited on the copper samples. Experimental data for the depth profiles of deposited/implanted atoms and for the thickness of films applied are also reported. The variation of the film thickness, the uniformity of the film, and the efficiency of mixing in the film–substrate system are discussed based on the experimental data.