CHARACTERIZATION OF IMPLANTED LAYERS AFTER LASER AND ELECTRON BEAM ANNEALING

(100) Si wafers implanted with 2×10 15 31 P + /cm 2 at 10 keV have been annealed by different techniques i.e. Q-switched ruby laser, pulsed electron beam, multiscan electron beam and furnace at 900°C 1/2 h. Analysis of residual damage (by Rutherford back-scattering and transmission electron microscopy), bulk life time, mobilities in the implanted layer and carrier concentration profiles have been obtained and compared for the different techniques investigated. Collected data supply information on the nature (liquid or solid phase) of the epitaxial regrowth of the implanted layer. Computer simulation of the heating effects produced by an electron beam at 20 keV have been used to define the experimental parameters for annealing.