Evolution of the Electron Acoustic Signal as a Function of Doping Level in III–V Compound Semiconductors

In the case of GaAs silicon doped epitaxial layers, as an example, the evolution of the electron acoustic signal as a function of the doping level is given. The results are explained by the role played by defects connected with silicon complexes. They give rise to deep level emission and to a thermal conductivity decrease, as the electronic contribution is shown to play a minor role.