Evolution of the Electron Acoustic Signal as a Function of Doping Level in III–V Compound Semiconductors
1988
In the case of GaAs silicon doped epitaxial layers, as an example, the evolution of the electron acoustic signal as a function of the doping level is given. The results are explained by the role played by defects connected with silicon complexes. They give rise to deep level emission and to a thermal conductivity decrease, as the electronic contribution is shown to play a minor role.
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