A D-band SPDT switch utilizing reverse-saturated SiGe HBTs for dicke-radiometers

This paper presents a low insertion loss and high isolation D-band (110–170 GHz) single-pole double-throw (SPDT) switch utilizing reverse-saturated SiGe HBTs for Dickeradiometers. The SPDT switch design is based on the quarter-wave shunt switch topology and implemented with further optimizations to improve the overall insertion loss and decrease the total chip size in a commercial 0.13-µm SiGe BiCMOS technology. Measurement results of the implemented SPDT switch show a minimum insertion loss of 2.6 dB at 125 GHz and a maximum isolation of 30 dB at 151 GHz while the measured input and output return loss is greater than 10 dB across 110–170 GHz. Total power consumption of the SPDT switch is 5.3 mW while draining 5.6 mA from a 0.95 V DC supply. Overall chip size is only 0.5×0.32 = 0.16 mm 2 , excluding the RF and DC pads.