Highly reliable Cu interconnect strategy for 10nm node logic technology and beyond

CVD-Ru represents a critically important class of materials for BEOL interconnects that provides Cu reflow capability. The results reported here include superior gap-fill performance, a solution for plausible integration issues, and robust EM / TDDB properties of CVD-Ru / Cu reflow scheme, by iterative optimization of process parameters, understanding of associated Cu void generation mechanism, and reliability failure analysis, thereby demonstrating SRAM operation at 10 nm node logic device and suggesting its use for future BEOL interconnect scheme.