128x128 hybrid FPAs using MBE HgCdTe films on GaAs substrates

The technology was developed and 128 X 128 LWIR FPA's based on HgCdTe epitaxial layers MBE-grown on GaAs substrates with cutoff wavelength (lambda) c equals 8 micrometer and 13 micrometer was fabricated. The photosensing layer HgCdTe was graded-gap layer with the higher content of Cd to boundaries of a layer. The manufactured LWIR FPA's had NETD 32 mK and 17 mK for (lambda) c equals 8 micrometer and 13 micrometer, correspondingly, at 295 K background and 80 K operation temperatures.