Methods for fabricating semiconductor devices having through vias

The present invention relates to a method for preparing semiconductor device having a through electrode, comprising the steps of: forming a via-hole which opens toward the top surface of a substrate and does not reach the lower surface of the substrate; forming a via-insulator film which is extended along the inner surface of the via-hole and covers the top surface of the substrate; forming a seed film arranged on the via-insulator film and extended along the via-insulator film; annealing the seed film via in-situ after forming the seed film; forming a conductive film filling the via-hole with electroplating by using the seed film; and forming a through-electrode surrounded by the via-insulator film in the via-hole by making the top surface of the substrate flat.