High open-circuit voltage betavoltaic cell based on GaN pin homojunction
2011
A high open-circuit voltage betavoltaic cell based on a GaN pin homojunction is demonstrated. A process of doping compensation has been developed to achieve high resistance i-GaN film for betavoltaics. Under 0.5 mCi 63 Ni source irradiation, the open-circuit voltage of the fabricated GaN pin homojunction betavoltaic cell was measured as high as 1.65 V. A fill factor of 54% and a 2.7% lower bound on the power conversion efficiency were obtained. The results suggest GaN is a highly potential candidate for the long-life betavoltaic cell.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
8
References
27
Citations
NaN
KQI