Thin film transistor, thin film transistor substrate and electronic apparatus

The present invention provides a thin film transistor, a thin film transistor substrate and an electronic apparatus. The thin film transistor is characterized in that the thin film transistor is composed of the polycrystal semiconductor film which comprises a large thermal capacity part with large thermal capacity and a small thermal capacity part with small thermal capacity. The small thermal capacity part is used as a channel part at least. The polycrystal semiconductor film is formed by the crystal grain film which is formed through laser annealing with the energy density that the small thermal capacity part is totally fused and the large thermal capacity part is not totally fused. Furthermore the end of the channel part formed on the small thermal capacity part in the width direction of the channel is more inward compared with the end of the large thermal capacity part in the width direction of the channel.