Silicon on insulator structures formed by the implantation of high doses of reactive ions

Abstract Silicon on insulator structures have been formed by implanting O + and N + ions into (100) silicon. The structures have been evaluated by RBS and SIMS techniques. In oxygen implanted substrates, the thickness and crystal quality of the surface layer is found to be insensitive to the ion energy. The thickness increases with anneal temperature over the range 1100°C to 1200°C and has a maximum value when the substrate temperature during implantation is 500°C. Nitrogen implanted wafers have a thicker single crystal layer with very abrupt Si/Si 3 N 4 interfaces.