Optical characterization of InAs δ-layers grown by MBE at different substrate temperatures

InAs layers with thickness of ~1 monolayer (@d-layers) were grown by MBE embedded in GaAs barriers in the direction [100]. Photoluminescence (PL) spectroscopy was employed to study the electronic transitions in the @d-layers. By secondary-ion mass spectroscopy (SIMS) we checked out the possible In segregation. The samples consist of five InAs @d-layers embedded in between 60nm-thick GaAs barriers, such that the electron wave functions do not overlap each other, as we verified with a model of a square quantum well (SQW), which help us to calculate also the well width.