A process for preparing disilicate cerium doped lutetium film scintillation method

The present invention discloses a method of preparing disilicate cerium doped lutetium scintillation film, comprising the steps of: a) cleaning the surface of the monocrystalline silicon wafer and the oxide layer go pretreatment; b) by the method using chemical etching step a) single crystal silicon wafer surface after pretreatment etched porous; surface etching c) step b) is obtained having a porous monocrystalline silicon wafer into a solution of acetic acid 3 CexLu1-x (NO3) at 25 ~ 60 deg.] C after 8 to 12 hours immersed, drying standby; wherein, CexLu1-x (NO3) in 3 x = 0.001 ~ 0.040; d) step c) single crystal silicon wafer obtained in an inert atmosphere at 1000 heat treatment at ~ 1200 ℃ 2 ~ 4 hours. The present invention may be implemented in a simple, low-cost, large-area having a thickness of up to 30 to 60 microns, and the film and the substrate binding disilicate solid cerium-doped lutetium scintillation film, promising applications.