Simulation Study of the Influence of Ionizing Irradiation on the Single Event Upset Vulnerability of Static Random Access Memory

Single event upset vulnerability of micron scale and deep sub-micron scale SRAM (Static Random Access Memory) cells are characterized and analyzed after ionizing irradiation is introduced. Meanwhile, by means by three dimentional simulation, electrical responses of 6-T SRAM cell with feature size 0.18um are calculated when storing different states, irradiated with different deposited doses and strike at different transistors. The simulation results are consistent with the analysis conclusion: the single event upset vulnerability would increase only when the SRAM cell stores the same state as the one storing in the irradiation period.