SOI mini-type Pirani gage and manufacturing method thereof

The invention discloses an SOI mini-type Pirani gage, and belongs to the field of vacuum degree detecting of a micro electro mechanical system packaging. A silicon structure of the Pirani gage is manufactured on a device layer 8, and mainly comprises a heating structure and a heat dissipating structure. The heating structure is composed of two heating bodies 5 periodically bending in a trapezoid mode. The heat dissipating structure is composed of two symmetrical side heat dissipating body comb teeth 2 on side faces and a middle heat dissipating body comb tooth 3, and the two side heat dissipating body comb teeth 2 and the middle heat dissipating comb tooth 3 are respectively meshed with the heating bodies 5. The SOI mini-type Pirani gage has the advantages that the heating bodies and anchoring points have four connecting points, and compared with a heating body with the same length, the mechanical strength of the SOI mini-type Pirani gage is enhanced; the technologies such as bonding and depositing are not applied in the technology process, and heating body collapsing and fracturing caused by thermal expansion are avoided; a substrate can serve as a heat dissipating body besides the heat dissipating body in the structure of the device layer, the included angle between the heating bodies and a plane in the vertical direction is 2+/-1 degrees, heat dissipating is facilitated, and the responding time of the Pirani gage is shortened.