Phonon contribution to nonionizing energy loss in silicon detectors

Nonionizing energy loss (NIEL) has been applied to a number of studies concerning displacement damage effects in materials and devices. However, most studies consider only the contribution of displacement damage effects, neglecting the contribution from phonons. In this paper, a NIEL model, which considers the contribution of phonons, has been established using the Monte Carlo code SRIM. The maximum endurable fluence for silicon detectors has been estimated using the equivalent irradiation fluence compared with experimental data for the incident particles. NIEL is proportional to the equivalent irradiation fluence that the detector has received.