Silicon-containing film, the resin composition and pattern forming method

An object of the present invention, the resist pattern and the adhesion excellent and the resist material penetration is less silicon-containing film, the resin composition for forming the silicon-containing film, and a patterning process using the silicon-containing film it is to provide. The pattern forming method in nanoimprint lithography of the present invention, 1. On a substrate to be processed, the mass ratio of silicon atoms and carbon atoms in the silicon-containing film, forming a silicon-containing film is a silicon atom / carbon atom = 2-12, 2. On the silicon-containing film, a step to form a target shape transfer layer, in a stamper having a fine pattern, which was transferring a fine pattern onto a shape transfer layer to form a resist pattern, 3. Wherein the resist pattern as a mask, and a step of forming a pattern of the silicon-containing film and the substrate to be processed to the substrate to be processed by dry etching.