Silicon-containing film, the resin composition and pattern forming method
2010
An object of the present invention, the resist pattern and the adhesion excellent and the resist material penetration is less silicon-containing film, the resin composition for forming the silicon-containing film, and a patterning process using the silicon-containing film it is to provide. The pattern forming method in nanoimprint lithography of the present invention, 1. On a substrate to be processed, the mass ratio of silicon atoms and carbon atoms in the silicon-containing film, forming a silicon-containing film is a silicon atom / carbon atom = 2-12, 2. On the silicon-containing film, a step to form a target shape transfer layer, in a stamper having a fine pattern, which was transferring a fine pattern onto a shape transfer layer to form a resist pattern, 3. Wherein the resist pattern as a mask, and a step of forming a pattern of the silicon-containing film and the substrate to be processed to the substrate to be processed by dry etching.
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