3D STUDY OF BIFACIAL SILICON SOLAR CELL UNDER INTENSE LIGHT CONCENTRATION AND UNDER EXTERNAL CONSTANT MAGNETIC FIELD: EFFECT OF MAGNETIC FIELD AND BASE DEPTH ON EXCESS MINORITY CARRIER GENERATION.

Many studies on recombination and electrical parameters of solar cells under constant illumination neglecting the bulk electric field have been proposed with one [1-3] or three [4] dimensional approach. This work present a three-dimensional study of bifacial silicon solar cell under intense light concentration (more than 50 suns) [5] and under constant magnetic field. This approach is based on the resolution of the minority continuity equation, taking into account the distribution of the electric field in the bulk evaluated as a function of both majority and minority carrier densities [5]. In this approach, news analytical expressions of diffusion length, diffusion coefficient and excess minority carrier density was established for front illumination. The effects of base depth and magnetic field [1-3] on excess minority carrier generation and profile are then analysed. Resume: